MMDT3906

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features EpitaxialPlanarDieConstruction IdealforLowPowerAmplificationandSwitching Ultra-SmallSurfaceMountPackage

MMDT3906

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •BVCEO>-40V •IC=-200mAHighCollectorCurrent •EpitaxialPlanarDieConstruction •IdealforMediumPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •ComplementaryNPNType:MMDT3904 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •Ha

MMDT3906

DUAL SURFACE MOUNT PNP TRANSISTORS

Thisdevicecontainstwoelectrically-isolated2N3906PNPtransistors.ThetwotransistorshavewellmatchedhFEandareencapsulatedinanultrasmallSOT-363(SC70-6L)package.Thisdeviceisidealforportableapplicationswhereboardspaceisatapremium. FEATURES ●ElectricallyIsolatedDu

MMDT3906

Marking：K3N；Package：SOT-363；Dual PNP Small Signal Surface Mount Transistor

FEATURES ●Epitaxialplanardieconstruction. ●Idealforlowpoweramplificationandswitching. ●Ultra-smallsurfacemountpackage. ●Alsoavailableinleadfreeversion. APPLICATIONS ●Generalswitchingandamplification.

MMDT3906

PNP Small Signal Surface Mount Transistors

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixdesignatesRoHSCompliant.Seeorderinginformation) •IdealforLowPowerAmplificationandSwitching •Ultra-smallSurfaceMountPackage •EpitaxialPlanarDieConstruction •Epo

MMDT3906

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Features •EpitaxialPlanarDieConstruction •IdealforLowPowerAmplificationandSwitching •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •GreenDevice(Note3and4)

MMDT3906

DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

DESCRIPTION TheUTCMMDT3906isaDualPNPsmallsignalsurfacemounttransistor.It’ssuitableforlowpoweramplificationandswitch. FEATURES *SuitableforLowPowerAmplificationandSwitching *EpitaxialPlanarDieConstruction *Extremely-SmallSurfaceMountPackage

MMDT3906

PNPPNP Plastic-Encapsulate Transistors

Features Epitaxialplanardieconstruction Idealforlowpoweramplificationandswitching

MMDT3906

DUAL TRANSISTOR (PNPPNP)

DUALTRANSISTOR(PNP+PNP) FEATURES ●Epitaxialplanardieconstruction ●Idealforlowpoweramplificationandswitching

MMDT3906

Multi-Chip TRANSISTOR (PNP)

FEATURES PowerdissipationPCM:0.2W(Tamb=25℃) CollectorcurrentICM:-0.2A Collector-basevoltageV(BR)CBO:-40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃