General Purpose Transistor(NPN Silicon)

General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available

文件：164.6 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

文件：218.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General Purpose Transistor

General Purpose Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable

文件：143.64 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

General Purpose Transistor

Features • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECïQ101 Qualified and PPAP Capable

文件：218.31 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

文件：98 Kbytes 页数：3 Pages

UTC

友顺

GENERAL PURPOSE APPLIATION

GENERAL PURPOSE APPLIATION ■ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: PD(MAX)=350mW * Complementary to UTC MMBT3906

文件：98 Kbytes 页数：3 Pages

UTC

友顺

40V NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary PNP Type MMBT3906LP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

文件：166.2 Kbytes 页数：5 Pages

DIODES

美台半导体

50V NPN General Purpose Transistor|

Features « High voltage and high current : Vceo = 50V, Ic = 100mA (max) « Excellent hg linearity : hrg (Ic = 0.1 mA)/hgeg (Ic = 2 mA)= 0.95 (typ.) * High hrg - hp = 120 to 400

文件：470.27 Kbytes 页数：2 Pages

TECHPUBLIC

台舟电子

40V NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary PNP Type MMBT3906LP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

文件：166.2 Kbytes 页数：5 Pages

DIODES

美台半导体

40V NPN SURFACE MOUNT TRANSISTOR

Features • BVCEO > 40V • IC = 200mA High Collector Current • PD = 1000mW Power Dissipation • 0.60mm2 Package Footprint, 13 times Smaller than SOT23 • 0.5mm Height Package Minimizing Off-Board Profile • Complementary PNP Type MMBT3906LP • Totally Lead-Free & Fully RoHS Compliant (Notes 1

文件：166.2 Kbytes 页数：5 Pages

DIODES

美台半导体