丝印：6Z；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

文件：75.64 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can

文件：1.40939 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

文件：140.38 Kbytes 页数：2 Pages

UTC

友顺

丝印：C6Z；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for Hi

文件：62.76 Kbytes 页数：2 Pages

DIODES

美台半导体

N-Channel Enhancement Mode MOSFET

Features ● Surface-mounted package ● Advanced trench cell design ● Extremely low threshold voltage ● ESD protected ( HBM > 2KV ) Quick reference ● BV ≧ 60 V ● Ptot ≦ 0.83 W ● ID ≦ 0.5 A ● RDS(ON) ≦ 3 Ω @ VGS = 10 V ● RDS(ON) ≦ 4 Ω @ VGS = 4.5 V

文件：873.26 Kbytes 页数：6 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：6Z；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：517.87 Kbytes 页数：13 Pages

FAIRCHILD

仙童半导体

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

The UTC MMBF170 is an N-channel enhancement MOSFETusing UTC’s advanced technology to provide the customers withperfect RDS(ON), low input capacitance, low gate threshold voltageand high switching speed. • RDS(ON)<5mΩ @ VGS=10V,ID=0.2A\n• High Switching Speed\n• Low Input Capacitance(typical 22pF);

UTC

友顺

N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

美台半导体

MOS场效应

JSMICRO

杰盛微

0.5A, 60V N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC MMBF170 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), low input capacitance, low gate threshold voltage and high switching speed. FEATURES * RDS(ON)

文件：140.38 Kbytes 页数：2 Pages

UTC

友顺