丝印：6Z；Package：SOD-323；Surface Mount Zener Diodes

Features ◇ Wide zener voltage range selection:2.4V to 75V . ◇ VZ Tolerance selection of ±2(B series). ◇ Ideally suited for automated assembly processes. ◇ Moisture sensitivity level 1. Applications ◇ Zener diode. ◇ Ultra-small surface mount package.

文件：1.63879 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：6Z；Package：SC-76；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：234.92 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：6Z；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：6Z；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can b

文件：75.64 Kbytes 页数：5 Pages

Fairchild

仙童半导体

丝印：6Z；Package：DSBGA；TPS22920x 3.6-V, 4-A, 5.3-mΩ On-Resistance, Integrated Load Switch with Controlled Turn-on

1 Features 1• Input Voltage Range: 0.75 V to 3.6 V • Integrated Load Switch • Integrated Pass-FET rDSON = 2 mΩ (Typ) at 3.6 V • Typical ON-Resistance – rON = 5.3 mΩ at VIN = 3.6 V – rON = 5.4 mΩ at VIN = 2.5 V – rON = 5.5 mΩ at VIN = 1.8 V – rON = 5.8 mΩ at VIN = 1.2 V – rON = 6.1 mΩ at V

文件：863.38 Kbytes 页数：28 Pages

TI

德州仪器

丝印：6Z；Package：DSBGA；TPS22920x 3.6-V, 4-A, 5.3-mΩ On-Resistance, Integrated Load Switch with Controlled Turn-on

1 Features 1• Input Voltage Range: 0.75 V to 3.6 V • Integrated Load Switch • Integrated Pass-FET rDSON = 2 mΩ (Typ) at 3.6 V • Typical ON-Resistance – rON = 5.3 mΩ at VIN = 3.6 V – rON = 5.4 mΩ at VIN = 2.5 V – rON = 5.5 mΩ at VIN = 1.8 V – rON = 5.8 mΩ at VIN = 1.2 V – rON = 6.1 mΩ at V

文件：863.38 Kbytes 页数：28 Pages

TI

德州仪器

丝印：6Z；Package：DSBGA；TPS22920x 3.6-V, 4-A, 5.3-mΩ On-Resistance, Integrated Load Switch with Controlled Turn-on

1 Features 1• Input Voltage Range: 0.75 V to 3.6 V • Integrated Load Switch • Integrated Pass-FET rDSON = 2 mΩ (Typ) at 3.6 V • Typical ON-Resistance – rON = 5.3 mΩ at VIN = 3.6 V – rON = 5.4 mΩ at VIN = 2.5 V – rON = 5.5 mΩ at VIN = 1.8 V – rON = 5.8 mΩ at VIN = 1.2 V – rON = 6.1 mΩ at V

文件：863.38 Kbytes 页数：28 Pages

TI

德州仪器

丝印：6Z；Package：DSBGA；TPS22920x 3.6-V, 4-A, 5.3-mΩ On-Resistance, Integrated Load Switch with Controlled Turn-on

1 Features 1• Input Voltage Range: 0.75 V to 3.6 V • Integrated Load Switch • Integrated Pass-FET rDSON = 2 mΩ (Typ) at 3.6 V • Typical ON-Resistance – rON = 5.3 mΩ at VIN = 3.6 V – rON = 5.4 mΩ at VIN = 2.5 V – rON = 5.5 mΩ at VIN = 1.8 V – rON = 5.8 mΩ at VIN = 1.2 V – rON = 6.1 mΩ at V

文件：863.38 Kbytes 页数：28 Pages

TI

德州仪器

丝印：6Z；Package：DSBGA；TPS22920x 3.6-V, 4-A, 5.3-mΩ On-Resistance, Integrated Load Switch with Controlled Turn-on

1 Features 1• Input Voltage Range: 0.75 V to 3.6 V • Integrated Load Switch • Integrated Pass-FET rDSON = 2 mΩ (Typ) at 3.6 V • Typical ON-Resistance – rON = 5.3 mΩ at VIN = 3.6 V – rON = 5.4 mΩ at VIN = 2.5 V – rON = 5.5 mΩ at VIN = 1.8 V – rON = 5.8 mΩ at VIN = 1.2 V – rON = 6.1 mΩ at V

文件：863.38 Kbytes 页数：28 Pages

TI

德州仪器

丝印：6Z；Package：DSBGA；TPS22920x 3.6-V, 4-A, 5.3-mΩ On-Resistance, Integrated Load Switch with Controlled Turn-on

1 Features 1• Input Voltage Range: 0.75 V to 3.6 V • Integrated Load Switch • Integrated Pass-FET rDSON = 2 mΩ (Typ) at 3.6 V • Typical ON-Resistance – rON = 5.3 mΩ at VIN = 3.6 V – rON = 5.4 mΩ at VIN = 2.5 V – rON = 5.5 mΩ at VIN = 1.8 V – rON = 5.8 mΩ at VIN = 1.2 V – rON = 6.1 mΩ at V

文件：863.38 Kbytes 页数：28 Pages

TI

德州仪器