SURFACE MOUNT SCHOTTKY BARRIER DIODE

Very Low Capacitance Low Forward Voltage PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：53.32 Kbytes 页数：4 Pages

WTE

Won-Top Electronics

SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE

FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Typ) at IF=10mA • Extremely Fast Switching Speed • Pb free product are available : 99 Sn above can meet RoHS environment substance directive request

文件：89.41 Kbytes 页数：3 Pages

PANJIT

強茂

Dual Hot Carrier Mixer Diodes

文件：93.76 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

文件：93.76 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Dual Hot Carrier Mixer Diodes

文件：122.87 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

7.0 V Dual Common Anode Schottky Diode

The Schottky Diode is designed primarily for UHF mixer applications but is suitable also for use in detector and ultra fast switching circuits. • Very Low Capacitance - Less Than 1.0 pF @ Zero Volts\n• Pb-Free Packages are Available\n• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC Qualified and PPAP Capable;

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 射频 描述：DIODE SCHOTTKY 7V 225MW SOT23-3

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT） 类别：分立半导体产品 二极管 - 射频 描述：DIODE SCHOTTKY 7V 225MW SOT23-3

ONSEMI

安森美半导体