Silicon Hot-Carrier Diodes

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安森美半导体

Silicon Hot-Carrier Diode

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安森美半导体

Silicon Hot-Carrier Diode

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安森美半导体

Silicon Hot-Carrier Diode

文件：94.61 Kbytes 页数：3 Pages

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安森美半导体

SURFACE MOUNT SCHOTTKY DIODE

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PANJIT

強茂

肖特基二极管 UHF 30 V

The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications. It is supplied in an inexpensive plastic package for lowhigh-volume consumer and industrial/commercial requirements. It is • Extremely Low Minority Carrier Lifetime - 15 ps (Typ)\n• Very Low Capacitance - 1.5 pF (Max) @ VR = 15 V\n• Low Reverse Leakage - IR = 13 nAdc (Typ) MBD301, MMBD301\n• Pb-Free Packages are Available\n• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirem;

ONSEMI

安森美半导体

Silicon Hot-Carrier Diodes

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 射频 描述：DIODE SCHOTTKY 30V 200MW SOT23-3

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 二极管 - 射频 描述：DIODE SCHOTTKY 30V 200MW SOT23-3

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 射频 描述：DIODE SCHOTTKY 30V 200MW SOT23-3

ONSEMI

安森美半导体