Silicon Power Transistors

MJW21195 (PNP) MJW21196 (NPN) The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features •Total Harmonic Distortion Characterized •High DC Current Gain −hFE= 2

文件：91.95 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain − hFE = 20 Min @ IC = 8 Adc  Excellent Gain Lin

文件：202.32 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

文件：75.38 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon Power Transistors

文件：163.26 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Silicon PNP Power Transistor

文件：418.86 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Transistor, PNP, 250 V, 16 A

The MJW21196 NPN Bipolar Complementary Audio Power Transistor utilizes Perforated Emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications. • Total Harmonic Distortion Characterized\n• High DC Current Gain –hFE = 20 Min @ IC = 8 Adc\n• Excellent Gain Linearity\n• High SOA: 2.25 A, 80 V, 1 Second\n• Pb-Free Packages are Available;

ONSEMI

安森美半导体

音频功放晶体管

THUNDER

中科创达

音频三极管

BlueRocket

蓝箭电子

Package：TO-247-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 250V 16A TO247-3

ONSEMI

安森美半导体

Silicon Power Transistors

The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Features  Total Harmonic Distortion Characterized  High DC Current Gain − hFE = 20 Min @ IC = 8 Adc  Excellent Gain Lin

文件：202.32 Kbytes 页数：8 Pages

ONSEMI

安森美半导体