NPN Silicon Power Transistors

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times • 50 ns Inductiv

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ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

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ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司