NPN Silicon Power Transistors

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times • 50 ns Inductiv

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ONSEMI

安森美半导体

POWER TRANSISTORS 15 AMPERES 500 VOLTS 125 AND 175 WATTS

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Features: • Collector–Emitter Voltage — VCEV = 1000 Vdc • Fast Turn–Off Times 50 ns Induct

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Motorola

摩托罗拉

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

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ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 500V(Min) • Wide Area of Safe Operation APPLICATIONS • Designed for high-voltage, high-speed,power switching in inductive circuits where fall time is critical. They are particularly suited for

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans GP BJT NPN 500V 15A 3-Pin(3+Tab) TO-247

NJS