MJW16010A中文资料安森美半导体数据手册PDF规格书

These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated SWITCHMODE applications.

Features:

• Collector–Emitter Voltage — VCEV = 1000 Vdc

• Fast Turn–Off Times

• 50 ns Inductive Fall Time — 100°C (Typ)

• 90 ns Inductive Crossover Time — 100°C (Typ)

• 900 ns Inductive Storage Time — 100°C (Typ)

• 100°C Performance Specified for: Reverse–Biased SOA with Inductive Load Switching Times with Inductive Loads Saturation Voltages Leakage Currents

• Extended FBSOA Rating Using Ultra–fast Rectifiers

• Extremely High RBSOA Capability

Typical Applications:

• Switching Regulators

• Inverters

• Solenoids

• Relay Drivers

• Motor Controls

• Deflection Circuits