COMPLEMENTARY SILICON POWER TRANSISTORS

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. •Total Harmonic Distortion Characterized •High DC Cur

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安森美半导体

200 Watt Silicon Epitaxial Planar NPN Type Power Transistor

DESCRIPTION ·With TO-3PL-SQ(TO-3PBL/TO-3BPL) pkg ·Complement to type MJL21195A APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

文件：2.81346 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

200 Watt Silicon Epitaxial Planar NPN Type Power Transistor

DESCRIPTION ·With TO-3PL-SQ(TO-3PBL/TO-3BPL) pkg ·Complement to type MJL21195G APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage

文件：2.54529 Mbytes 页数：6 Pages

THINKISEMI

思祁半导体

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

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MOTOROLA

摩托罗拉

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

文件：203.73 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

200Watt/15A/260V Silicon Epitaxial Planar NPN Power Transistor

DESCRIPTION ·With TO-3PL-SQ(TO-3PBL/TO-3BPL) pkg ·Complement to type MJL1302A APPLICATIONS ·Home Amplifiers/Home Receivers ·Theater and Stadium Sound Systems ·Public Address Systems (PAs)

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THINKISEMI

思祁半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 200 WATTS MJL3281A (NPN) MJL1302A (PNP) The MJL3281A and MJL1302A are PowerBase
power transistors for high power audio, disk head positioners and other linear Features •Exceptional Safe Operating Area •NPN/PNP Gai

文件：147.98 Kbytes 页数：6 Pages

ONSEMI

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Complementary NPN-PNP Silicon Power Bipolar Transistors

MJL4281A (NPN) MJL4302A (PNP) 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS The MJL4281A and MJL4302A are PowerBasepower transistors for high power audio. Features •350 V Collector−Emitter Sustaining Voltage •Gain Complementary: Gain Linear

文件：55.72 Kbytes 页数：6 Pages

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isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 350V(Min) ·High DC Current Gain :hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL4302A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Perforated Emitter technology ·Hig

文件：265.81 Kbytes 页数：2 Pages

ISC

无锡固电

Complementary NPN-PNP Silicon Power Bipolar Transistors

MJL4281A (NPN) MJL4302A (PNP) 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS The MJL4281A and MJL4302A are PowerBasepower transistors for high power audio. Features •350 V Collector−Emitter Sustaining Voltage •Gain Complementary: Gain Linear

文件：55.72 Kbytes 页数：6 Pages

ONSEMI

安森美半导体