Complementary NPN-PNP Silicon Power Bipolar Transistors

MJL4281A (NPN) MJL4302A (PNP) 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS The MJL4281A and MJL4302A are PowerBasepower transistors for high power audio. Features •350 V Collector−Emitter Sustaining Voltage •Gain Complementary: Gain Linear

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isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 350V(Min) ·High DC Current Gain :hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL4302A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Perforated Emitter technology ·Hig

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Complementary NPN-PN Silicon Power Bipolar Transistors

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15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

文件：64.099 Kbytes 页数：5 Pages

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15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

文件：64.099 Kbytes 页数：5 Pages

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Complementary NPN-PN Silicon Power Bipolar Transistors

文件：102.85 Kbytes 页数：5 Pages

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Complementary NPN-PN Silicon Power Bipolar Transistors

文件：102.85 Kbytes 页数：5 Pages

ONSEMI

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15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 350 VOLTS, 230 WATTS

文件：64.099 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Complementary NPN-PN Silicon Power Bipolar Transistors

文件：102.85 Kbytes 页数：5 Pages

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双极功率晶体管，NPN，15 A，350 V，230 W

The MJL4281A and MJL4302A Bipolar Complementary Audio Power Transistors are power transistors for high power audio. • - 350V Collector-Emitter Sustaining Voltage\n• Gain Complementary:\n• Gain Linearity from 100 mA to 5 A\n• High Gain - 80 to 250\n• hfe = 50 (min) at Ic = 8A\n• Low Harmonic Distortion\n• High Safe Operating Area - 1.0 A / 100 V at 1 Second\n• High ft;

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