MJH11022中文资料15 A, 250 V NPN Darlington Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP); MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.

特性 Features

• High DC Current Gain @ 10 Adc -hFE = 400 Min (All Types)
• Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min)MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• Pb-Free Packages are Available

简介

MJH11022属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJH11022晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。