MJH11020数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP); MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.

特性 Features

• High DC Current Gain @ 10 Adc -hFE = 400 Min (All Types)
• Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min)MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• Pb-Free Packages are Available

简介

MJH11020属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJH11020晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。