DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications. Features • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types) • Collector−Emitter Sustaining Voltage VCEO(sus)

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15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS

15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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Motorola

摩托罗拉

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 250V (Min.) ·High DC Current Gain : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Complement to Type MJH11021 ·Minimum Lot-to-Lot variations for robust device performance and relia

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ISC

无锡固电

15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150??50 VOLTS, 150 WATTS

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Complementary Darlington Silicon Power Transistors

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15 A, 250 V NPN Darlington Bipolar Power Transistor

The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP); MJH11018, MJH11020, MJH11022 (NPN) are complementary devices. • High DC Current Gain @ 10 Adc -hFE = 400 Min (All Types)\n• Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min)MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21\n• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A V;

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Trans Darlington NPN 250V 15A 3-Pin(3+Tab) SOT-93 Rail

NJS

Package：TO-218-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 250V 15A SOT93

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Complementary Darlington Silicon Power Transistors

文件：100.88 Kbytes 页数：8 Pages

ONSEMI

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15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150??50 VOLTS, 150 WATTS

文件：86.19 Kbytes 页数：6 Pages

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