General Purpose and Switching Applications

General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.)

文件：36.92 Kbytes 页数：4 Pages

Fairchild

仙童半导体

NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)

GENERAL PUPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High Current Gain-Bandwidth Product (fT = 25 °C)

文件：216.66 Kbytes 页数：6 Pages

Samsung

三星

NPN Silicon Plastic-Encapsulate Transistor

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • Capable of 2.0Watts of Power Dissipation. • Collector-current 10A • Collector-base Voltage 70V • Operating and st

文件：246.08 Kbytes 页数：3 Pages

MCC

Complementary Silicon power transistors (10A / 60V / 75W)

DESCRIPTION The MJE3055A is a silicon epitaxial-base planar NPN transistor in TO-220AB package. lt is intended for use in general-purpose amplifier and switding applications. The complementary PNP type is MJE2955A. FEATURES ● Designed for general-purpose switching and amplifier applications.

文件：195.88 Kbytes 页数：3 Pages

NELLSEMI

尼尔半导体

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Large DC current(IC=10A),high fT(fT≥2Mhz). Applications General purpose and switching applications.

文件：939.29 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

文件：93.11 Kbytes 页数：1 Pages

TGS

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件：64.709 Kbytes 页数：1 Pages

WINGS

永盛电子

COMPLEMENTARY SILICON POWER TRANSISTORS

■ STMicroelectronics PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T.

文件：61.49 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

文件：65.19 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

COMPLEMENTARY SILICON POWER TRANSISTORS

COMPLEMENTARY SILICON POWER TRANSISTORS ...designed for usein general-purpose amplifier and switching applications FEATURES: * Power Dissipation - PD = 75 W © Tc = 25°C * DC Current Gain hFE = 20- 100 © lc = 4.0 A * vCE(isrt) = 1-1 V (Max.) © lc = 4.0 A, IB= 400 mA

文件：85.06 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司