丝印：MJE3055；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES General Purpose and Switching Applications

文件：1.37433 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：125.54 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Complementary Silicon Plastic Power Transistors

Features • High Current Gain − Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant*

文件：75.17 Kbytes 页数：4 Pages

SYC

Plastic-Encapsulated Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 2 W (Tamb=25℃) Collector current ICM: 10 A Collector-base voltage V(BR)CBO: 70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：55.44 Kbytes 页数：1 Pages

TEL

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS

Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 10 Amperes • High Current Gain — Bandwidth Product — fT = 2.0 MHz (Min) @ IC = 500 mAdc

文件：129.259 Kbytes 页数：4 Pages

Motorola

摩托罗拉

Plastic-Encapsulate Power Transistors

Plastic-Encapsulate Power Transistors P/b Lead(Pb)-Free

文件：133.75 Kbytes 页数：3 Pages

WEITRON

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min) ·High DC Current Gain-: hFE= 20-100@IC= 4A ·Complement to Type MJE2955 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications.

文件：241.59 Kbytes 页数：2 Pages

ISC

无锡固电

TO-220-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● General Purpose and Switching Applications

文件：1.41214 Mbytes 页数：2 Pages

JIANGSU

长电科技

SILICON EPITAXIAL PLANAR TRANSISTOR

GENERAL DESCRIPTION Complementary, high power transistors in a plastic envelope, primarily for use in audio and general purpose

文件：64.709 Kbytes 页数：1 Pages

WINGS

永盛电子

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE3055T is a silicon epitaxial-base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES

文件：65.19 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体