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MJE182

Low Power Audio Amplifier Low Current High Speed Switching Applications

Low Current High Speed Switching Applications

文件:48.85 Kbytes 页数:4 Pages

Fairchild

仙童半导体

MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

文件:172.52 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MJE182

PNP PLASTIC POWER TRANSISTORS

MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS

文件:556.74 Kbytes 页数:3 Pages

CDIL

MJE182

SILICON COMPLEMENTRY POWER TRANSISTOR

文件:71.77 Kbytes 页数:1 Pages

Central

MJE182

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

文件:228.62 Kbytes 页数:4 Pages

MOSPEC

统懋

MJE182

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

文件:172.52 Kbytes 页数:4 Pages

Motorola

摩托罗拉

MJE182

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage—: VCEO(SUS) = 80 V ·DC Current Gain—: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE172 APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications

文件:126.26 Kbytes 页数:3 Pages

ISC

无锡固电

MJE182

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181

文件:95.68 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MJE182

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications

文件:102.83 Kbytes 页数:3 Pages

SAVANTIC

MJE182

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY

文件:54.26 Kbytes 页数:4 Pages

STMICROELECTRONICS

意法半导体

晶体管资料

  • 型号:

    MJE182

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    80V

  • 最大电流允许值:

    3A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD179,BD189,BD237,BD441,SDD373C,

  • 最大耗散功率:

    12.5W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    80

  • htest:

    999900

  • atest:

    3

  • wtest:

    12.5

产品属性

  • 产品编号:

    MJE182

  • 制造商:

    STMicroelectronics

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    剪切带(CT)带盒(TB)

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    1.7V @ 600mA,3A

  • 电流 - 集电极截止(最大值):

    100nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    50 @ 100mA,1V

  • 频率 - 跃迁:

    50MHz

  • 工作温度:

    150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-225AA,TO-126-3

  • 供应商器件封装:

    SOT-32-3

  • 描述:

    TRANS NPN 80V 3A SOT32-3

供应商型号品牌批号封装库存备注价格
ON(安森美)
24+
标准封装
17048
支持大陆交货,美金交易。原装现货库存。
询价
ON/安森美
2025+
TO126
5000
原装进口价格优 请找坤融电子!
询价
24+
5000
公司存货
询价
ON
1215+
TO-126
150000
全新原装,绝对正品,公司大量现货供应.
询价
ST
24+
原厂封装
3050
原装现货假一罚十
询价
ON
25+
TO-263
18000
原厂直接发货进口原装
询价
ST
05+
原厂原装
6951
只做全新原装真实现货供应
询价
ON
16+
TO-126
10000
全新原装现货
询价
ON/ST
23+
TO-126
5000
原装正品,假一罚十
询价
ST
25+
SOT-32
2789
原装优势!绝对公司现货!
询价
更多MJE18供应商 更新时间2025-12-26 14:30:00