| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MJE182 | POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS | MOSPEC MOSPEC |  | |
MJE182 | POWER TRANSISTORS COMPLEMENTARY SILICON ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171, | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | |
MJE182 | COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJE172(PNPtype)andMJE182(NPNtype)aresiliconepitaxialplanar,complementarytransistorsinJedecSOT-32plasticpackage,theyaredesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARY | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  | |
MJE182 | 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS 3AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60–80VOLTS12.5WATTS ...designedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=60Vdc—MJE171,MJE181 VCEO(sus)=80Vdc—MJE172,MJE182 | MotorolaMotorola, Inc 摩托罗拉 |  | |
MJE182 | Low Power Audio Amplifier Low Current High Speed Switching Applications LowCurrentHighSpeedSwitchingApplications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
MJE182 | isc Silicon NPN Power Transistor DESCRIPTION ·Collector–EmitterSustainingVoltage—:VCEO(SUS)=80V ·DCCurrentGain—:hFE=30(Min)@IC=0.5A =12(Min)@IC=1.5A ·ComplementtoTypeMJE172 APPLICATIONS ·Lowpoweraudioamplifier ·Lowcurrenthighspeedswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
MJE182 | COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
MJE182 | PNP PLASTIC POWER TRANSISTORS MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS | CDIL CDIL |  | |
MJE182 | SILICON COMPLEMENTRY POWER TRANSISTOR
| CentralCentral Semiconductor Corp 美国中央半导体 |  | |
MJE182 | Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications | SAVANTIC Savantic, Inc. |  | |
MJE182 | Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | |
MJE182 | Silicon NPN Power Transistors | SAVANTIC Savantic, Inc. | | |
MJE182 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
MJE182 | 包装：剪切带（CT）带盒（TB） 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 80V 3A SOT32-3 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS TheMJE/MJF18204haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDuetoLowBaseDriveRequirements: —HighandFlatDCCurrentGainhFE —FastSwitching —NoCoilRequi | MotorolaMotorola, Inc 摩托罗拉 | | ||
POWER TRANSISTORS SWITCHMODE™NPNBipolarPowerTransistorforElectronic LightBallastandSwitchingPowerSupplyApplications TheMJE/MJF18204haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDue | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS TheMJE/MJF18206haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDuetoLowBaseDriveRequirements: —HighandFlatDCCurrentGainhFE —FastSwitching —NoCoilRequi | MotorolaMotorola, Inc 摩托罗拉 | | ||
POWER TRANSISTORS SWITCHMODE™NPNBipolarPowerTransistorforElectronic LightBallastandSwitchingPowerSupplyApplications TheMJE/MJF18206haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDue | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
Complementary Plastic Silicon Power Transistors ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171, | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | ||
Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_功率放大 （L）
- 封装形式：
直插封装
- 极限工作电压：
80V
- 最大电流允许值：
3A
- 最大工作频率：
<1MHZ或未知
- 引脚数：
3
- 可代换的型号：
BD179,BD189,BD237,BD441,SDD373C,
- 最大耗散功率：
12.5W
- 放大倍数：
- 图片代号：
B-21
- vtest：
80
- htest：
999900
- atest：
3
- wtest：
12.5
产品属性
- 产品编号：
MJE182
- 制造商：
STMicroelectronics
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
剪切带（CT）带盒（TB）
- 晶体管类型：
NPN
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
1.7V @ 600mA，3A
- 电流 - 集电极截止（最大值）：
100nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
50 @ 100mA，1V
- 频率 - 跃迁：
50MHz
- 工作温度：
150°C（TJ）
- 安装类型：
通孔
- 封装/外壳：
TO-225AA，TO-126-3
- 供应商器件封装：
SOT-32-3
- 描述：
TRANS NPN 80V 3A SOT32-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
23+ |
标准封装 |
17048 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
isc |
2024+ |
TO-126 |
5000 |
询价 | |||
5000 |
公司存货 |
询价 | |||||
ON |
1215+ |
TO-126 |
150000 |
全新原装,绝对正品,公司大量现货供应. |
询价 | ||
ST |
16+ |
原厂封装 |
3050 |
原装现货假一罚十 |
询价 | ||
ON |
23+ |
TO-263 |
18000 |
询价 | |||
ST |
05+ |
原厂原装 |
6951 |
只做全新原装真实现货供应 |
询价 | ||
ST |
2017+ |
TO-126 |
52145 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
ON |
16+ |
TO-126 |
10000 |
全新原装现货 |
询价 | ||
STMicro. |
23+ |
SOT-32 |
7750 |
全新原装优势 |
询价 |
