MJE182规格书供应代理仙童半导体第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MJE18002	文件：254.94 Kbytes Page：10 Pages	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R 文件：254.94 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18002D2	文件：152.67 Kbytes Page：4 Pages	POWER TRANSISTORS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC* cir 文件：152.67 Kbytes 页数：4 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18002D2	文件：152.67 Kbytes Page：4 Pages	POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC* cir 文件：152.67 Kbytes 页数：4 Pages	Motorola 摩托罗拉	Motorola
MJE18002G	文件：161.25 Kbytes Page：8 Pages	SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R 文件：161.25 Kbytes 页数：8 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18004	文件：422.72 Kbytes Page：10 Pages	POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. This high voltage/high speed transistors offer the following: • Improved Ef 文件：422.72 Kbytes 页数：10 Pages	Motorola 摩托罗拉	Motorola
MJE18004	文件：150.94 Kbytes Page：2 Pages	isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts 文件：150.94 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
MJE18004	文件：89.23 Kbytes Page：2 Pages	Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts 文件：89.23 Kbytes 页数：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE18004	文件：101.76 Kbytes Page：3 Pages	Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts 文件：101.76 Kbytes 页数：3 Pages	SAVANTIC	SAVANTIC
MJE18004	文件：422.72 Kbytes Page：10 Pages	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D 文件：422.72 Kbytes 页数：10 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18004	文件：230.81 Kbytes Page：11 Pages	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D 文件：230.81 Kbytes 页数：11 Pages	ONSEMI 安森美半导体	ONSEMI

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晶体管资料

型号：
MJE182
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-NPN
性质：
低频或音频放大（LF）_功率放大（L）
封装形式：
直插封装
极限工作电压：
80V
最大电流允许值：
3A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
BD179,BD189,BD237,BD441,SDD373C,
最大耗散功率：
12.5W
放大倍数：
图片代号：
B-21
vtest：
80
htest：
999900
atest：
3
wtest：
12.5

产品属性

产品编号：
MJE182
制造商：
STMicroelectronics
类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
包装：
剪切带（CT）带盒（TB）
晶体管类型：
NPN
不同 Ib、Ic 时 Vce 饱和压降（最大值）：
1.7V @ 600mA，3A
电流 - 集电极截止（最大值）：
100nA（ICBO）
不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
50 @ 100mA，1V
频率 - 跃迁：
50MHz
工作温度：
150°C（TJ）
安装类型：
通孔
封装/外壳：
TO-225AA，TO-126-3
供应商器件封装：
SOT-32-3
描述：
TRANS NPN 80V 3A SOT32-3

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MJE182	ON(安森美)	24+	标准封装	17048	支持大陆交货,美金交易。原装现货库存。	询价
深圳市坤融电子科技有限公司	MJE182	ON/安森美	2025+	TO126	5000	原装进口价格优请找坤融电子!	询价
深圳市一线半导体有限公司	MJE182		24+		5000	公司存货	询价
深圳市勤思达科技有限公司	MJE182	ON	1215+	TO-126	150000	全新原装,绝对正品,公司大量现货供应.	询价
深圳市弘为电子有限公司	MJE182	ST	24+	原厂封装	3050	原装现货假一罚十	询价
谛辉(北京/上海/青岛 )电子科技有限公司	MJE182	ON	25+	TO-263	18000	原厂直接发货进口原装	询价
深圳市星佑电子有限公司	MJE182	ST	05+	原厂原装	6951	只做全新原装真实现货供应	询价
深圳市利加科技有限公司	MJE182	ON	16+	TO-126	10000	全新原装现货	询价
齐创科技(上海,北京,青岛)有限公司	MJE182	ON/ST	23+	TO-126	5000	原装正品,假一罚十	询价
深圳市佳鑫美电子科技有限公司	MJE182	ST	25+	SOT-32	2789	原装优势!绝对公司现货!	询价

更多MJE18供应商更新时间2025-12-26 14:30:00

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