MJE18002D2中文资料安森美半导体数据手册PDF规格书

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network

The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** circuit.

The main advantages brought by these new transistors are:

• Improved Global Efficiency Due to the Low Base Drive Requirements

• DC Current Gain Typically Centered at 45

• Extremely Low Storage Time Variation, Thanks to the Antisaturation Network

• Easy to Use Thanks to the Integrated Collector/Emitter Diode

The ON Semiconductor Six Sigma philosophy provides tight and reproductible parameter distribution.

* High speed High gain Bipolar transistor

** Power Factor Control