Designed for general purpose power and switching

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ONSEMI

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文件：11.62183 Mbytes 页数：234 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：MJD45H11A；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

文件：242.38 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

8 A，80 V，PNP 双极功率晶体管

The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers. • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)\n• Lead Formed Version in 16 mm Tape and Reel for Surface Mount (\"T4\" Suffix)\n• Electrically Similar to Popular D44H/D45H Series\n• Low Collector Emitter Saturati;

ONSEMI

安森美半导体