丝印：MJD45H11A；Package：DPAK；80 V, 8 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11A 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • El

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Discrete and MOSFET components, analog & logic ICs

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

80 V, 8 A PNP high power bipolar transistor

PNP high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package.\n NPN complement: MJD44H11A • High thermal power dissipation capability\n• High energy efficiency due to less heat generation\n• Electrically similar to popular MJD45H series\n• Low collector emitter saturation voltage\n• Fast switching speeds\n• AEC-Q101 qualified;

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Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 80V 8A DPAK

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司