MJD128

Complementary Darlington Power Transistor

ComplementaryDarlingtonPowerTransistor DPAKForSurfaceMountApplications Features Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •MonolithicConstructionWithBuilt−inBase−EmitterShuntResistors •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •

MJD128

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=-4A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-120V(Min) •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforgeneralpurpo

MJD128

Silicon PNP Power Transistor

DESCRIPTION ·HighDCCurrentGain- :hFE=1000(Min)@IC=-4A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-120V(Min) APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications.

MJD128T4G

Complementary Darlington Power Transistor

ComplementaryDarlingtonPowerTransistor DPAKForSurfaceMountApplications Features Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •MonolithicConstructionWithBuilt−inBase−EmitterShuntResistors •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc •

MJD128T4G

Complementary Darlington Power Transistor

ComplementaryDarlingtonPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •MonolithicConstructionWithBuilt−inBase−EmitterShuntResistors •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •E

MJD128T4G

Complementary Darlington Power Transistor

MJD128T4G_12

Complementary Darlington Power Transistor

MJD128T4

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：托盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 120V 8A DPAK

MJD128T4G

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 120V 8A DPAK