MJD117 (LEGACY FAIRCHILD)中文资料2.0 A, 100 V PNP Darlington Bipolar Power Transistor数据手册ONSEMI规格书

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厂商型号

MJD117 (LEGACY FAIRCHILD)

功能描述

2.0 A, 100 V PNP Darlington Bipolar Power Transistor

制造商

ONSEMI ON Semiconductor

中文名称

安森美半导体

数据手册

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更新时间

2025-9-22 18:11:00

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MJD117 (LEGACY FAIRCHILD)规格书详情

描述 Description

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.Replacement Active Part Number: MJD117

特性 Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (\"1\" Suffix)
• Lead Formed Version in 16 mm Tape and Reel (\"T4\" Suffix)
• Surface Mount Replacements for TIP110-TIP117 Series
• Monolithic Construction With Built-in Base-Emitter Shunt Resistors
• High DC Current GainhFE = 2500 (Typ) @ IC = 2.0 Adc
• Complementary Pairs Simplifies Designs
• PbFree Packages are Available
• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

应用 Application

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供应商 型号 品牌 批号 封装 库存 备注 价格
ON
0824/0835
DPAK
10
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24+
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30000
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ON/安森美
21+
SMD
30000
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TO251
23+
NA
15659
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ON/安森美
21+
DPAK-3
8080
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onsemi(安森美)
24+
DPAK3
7350
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ON/安森美
24+
NA/
2500
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23+
252-251-89
13000
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ON
23+
TO-251
3430
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ON/安森美
25+
DPAK
860000
明嘉莱只做原装正品现货
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