MJD112中文资料2.0 A, 100 V NPN Darlington Bipolar Power Transistor数据手册ONSEMI规格书

描述 Description

The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are complementary devices.

特性 Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
• Straight Lead Version in Plastic Sleeves (\"1\" Suffix)
• Lead Formed Version in 16 mm Tape and Reel (\"T4\" Suffix)
• Surface Mount Replacements for TIP110-TIP117 Series
• Monolithic Construction With Built-in Base-Emitter Shunt Resistors
• High DC Current GainhFE = 2,500 (Typ) @ IC = 2.0 Adc
• Complementary Pairs Simplifies Designs
• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
• These Devices are Pb-Free and are RoHS Compliant

简介

MJD112属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的MJD112晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。