Standard Thick Film Chip Resistors

FEATURES • Stability at different environmental conditions ΔR/R ≤ 1 (1000 h rated power at 70 °C) • 2 mm pitch packaging option for 0603 size • AEC-Q200 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Automotive • Indu

文件：138.42 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

FEATURES • Stability at different environmental conditions ΔR/R ≤ 1 (1000 h rated power at 70 °C) • 2 mm pitch packaging option for 0603 size • AEC-Q200 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Automotive • Indu

文件：138.42 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

FEATURES • Stability at different environmental conditions ΔR/R ≤ 1 (1000 h rated power at 70 °C) • 2 mm pitch packaging option for 0603 size • AEC-Q200 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Automotive • Indu

文件：138.42 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Standard Thick Film Chip Resistors

FEATURES • Stability at different environmental conditions ΔR/R ≤ 1 (1000 h rated power at 70 °C) • 2 mm pitch packaging option for 0603 size • AEC-Q200 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Automotive • Indu

文件：138.42 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power Transistors

Power Transistors TO-3 Case (Continued)

文件：54.14 Kbytes 页数：1 Pages

CENTRAL

Medium-Power Complementary Silicon Transistors

Medium-Power Complementary Silicon Transistors . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction with Built–in Base–Emitter Shunt Resistors

文件：139.27 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary NPN types are the MJ1000 and MJ1001 respectively.

文件：175.78 Kbytes 页数：4 Pages

COMSET

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 3A ·Low Collector Saturation Voltage- : VCE (sat)= 2.0V(Max.)@ IC= 3A APPLICATIONS ·Designed for use as output devices in complementary general pu

文件：74.35 Kbytes 页数：2 Pages

ISC

无锡固电

COMPLEMENTARY POWER DARLINGTONS

The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. PNP types are the MJ900 and MJ901, and their complementary NPN types

文件：115.12 Kbytes 页数：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

文件：118.78 Kbytes 页数：3 Pages

SAVANTIC