MJ0EK

Standard Thick Film Chip Resistors

FEATURES •Stabilityatdifferentenvironmentalconditions ΔR/R≤1(1000hratedpowerat70°C) •2mmpitchpackagingoptionfor0603size •AEC-Q200qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Automotive •Indu

MJ0EL

Standard Thick Film Chip Resistors

FEATURES •Stabilityatdifferentenvironmentalconditions ΔR/R≤1(1000hratedpowerat70°C) •2mmpitchpackagingoptionfor0603size •AEC-Q200qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Automotive •Indu

MJ0EQ

Standard Thick Film Chip Resistors

FEATURES •Stabilityatdifferentenvironmentalconditions ΔR/R≤1(1000hratedpowerat70°C) •2mmpitchpackagingoptionfor0603size •AEC-Q200qualified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Automotive •Indu

MJ1000

Silicon NPN Power Transistors

DESCRIPTION ·WithTO-3package ·DARLINGTON ·HighDCcurrentgain ·ComplementtotypeMJ900/901 APPLICATIONS ·Foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications

MJ1000

Medium-Power Complementary Silicon Transistors

Medium-PowerComplementarySiliconTransistors ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=6000(Typ)@IC=3.0Adc •MonolithicConstructionwithBuilt–inBase–EmitterShuntResistors

MJ1000

COMPLEMENTARY POWER DARLINGTONS

TheMJ900,MJ901,MJ1000andMJ1001aresiliconepitaxial-bastransistorsinmonolithicDarlingtonconfiguration,andaremountedinJEDECTO-3metalcase.Theyareintendedforuseinpowerlinearandswitchingapplications. PNPtypesaretheMJ900andMJ901,andtheircomplementaryNPNtypes

MJ1000

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min.) ·HighDCCurrentGain- :hFE=1000(Min.)@IC=3A ·LowCollectorSaturationVoltage- :VCE(sat)=2.0V(Max.)@IC=3A APPLICATIONS ·Designedforuseasoutputdevicesincomplementarygeneralpu

MJ1000

Power Transistors

PowerTransistors TO-3Case(Continued)

MJ1000

COMPLEMENTARY POWER DARLINGTONS

TheMJ900,MJ901,MJ1000andMJ1001aresiliconepitaxial-bastransistorsinmonolithic Darlingtonconfiguration,andaremountedinJEDECTO-3metalcase. Theyareintendedforuseinpowerlinearandswitchingapplications. TheircomplementaryNPNtypesaretheMJ1000andMJ1001respectively.

MJ10000

SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS

TheMJ10000andMJ10001darlingtontransistorisdesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforlineoperatedswitch-modeapplicationssuchas: FEATURES: •ContinuousCollectorCurrent-IC=20A