GaAs Schottky Diodes

MACOM's MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. ·Fourteen different configurations\n·Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available\n·Beam lead, Flip Chip or packaged devices;

MACOM

GaAs Schottky Diodes

文件：710.81 Kbytes 页数：4 Pages

MA-COM

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

文件：111.05 Kbytes 页数：3 Pages

MOSPEC

统懋

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

文件：136.79 Kbytes 页数：4 Pages

Motorola

摩托罗拉

High-Power NPN Silicon Transistor

High−Power NPN Silicon Transistor This transistor is for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502 • Pb−Free Packag

文件：136.79 Kbytes 页数：4 Pages

ONSEMI

安森美半导体