GaAs Schottky Diodes

MACOM's MGS Series of GaAs Schottky diodes are designed for optimum performance in millimeter wave components operating to 60 GHz. ·Fourteen different configurations\n·Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available\n·Beam lead, Flip Chip or packaged devices;

MACOM

GaAs Schottky Diodes

文件：710.81 Kbytes 页数：4 Pages

MA-COM

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

文件：111.05 Kbytes 页数：3 Pages

MOSPEC

统懋

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

文件：256.45 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

文件：194.68 Kbytes 页数：4 Pages

MOSPEC

统懋