首页 >MGB20N40CL其他被动元件>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
400V,23AN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
20A竊?00VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
400V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET Features •19.5A,400V,RDS(on)=0.22Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical45pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •CommonAnodeConfiguration •LeadFreeByDesign/RoHSCompliant(Note3) •GreenDevice(Note4) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralDescription GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
MC |
1931+ |
N/A |
1341 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
MAGNASPHERE |
20+ |
开关元件 |
2896 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
23+ |
N/A |
58600 |
一级代理放心采购 |
询价 | |||
PomonaElectronics |
新 |
9 |
全新原装 货期两周 |
询价 | |||
Pomona Electronics |
2022+ |
5 |
全新原装 货期两周 |
询价 | |||
正源光子 |
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | ||
原厂品牌 |
2020+ |
原厂封装 |
35000 |
100%进口原装正品公司现货库存 |
询价 | ||
正源光子 |
20+ |
1562 |
全新现货热卖中欢迎查询 |
询价 | |||
正源光子 |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 |
相关规格书
更多- MGCM02KG
- MGM3000X
- MH89790B
- MI9410
- MIC1232M
- MIC2025-1BM
- MIC2025-1FBM
- MIC2026-1BM
- MIC2026-2BM
- MIC2075-1BM
- MIC2145BMM
- MIC2172BM
- MIC2182BM
- MIC2505-2BM
- MIC2506BM
- MIC2525-2BM
- MIC2526-2BM
- MIC2544-1BM
- MIC2545A-2BM
- MIC2550
- MIC2557BM
- MIC2560-0BWM
- MIC2560-OBWM
- MIC2562-0BM
- MIC2562A-0YM
- MIC2562A-1BTS
- MIC2563A
- MIC2563A-0YSM
- MIC2563A-OBSM
- MIC29150-3.3BU
- MIC29150-5.0BU
- MIC29151-5.0BT
- MIC29152BT
- MIC29201-5.0BU
- MIC29202BU
- MIC29204BM
- MIC2920A-3.3BS
- MIC29300-12BT
- MIC29300-3.3BU
- MIC29300-5.0BU
- MIC29301-5.0BT
- MIC29302BT
- MIC29302WU
- MIC29303BU
- MIC29312BT
相关库存
更多- MG-HV80
- MGSF1N02LT1
- MHW1815
- MIC1232
- MIC1555BM5
- MIC2025-1BMM
- MIC2025-2BM
- MIC2026-1YM
- MIC2026-2YM
- MIC2075-2BM
- MIC2171BU
- MIC2172BN
- MIC2505-1BM
- MIC2505BM
- MIC2525-1BM
- MIC2526-1BM
- MIC2526-2BN
- MIC2545A-1BM
- MIC2549A-1BM
- MIC2550BML
- MIC2558BM
- MIC2560-1BWM
- MIC2561-1BM
- MIC2562A-0BM
- MIC2562A-1BM
- MIC2562A-1YM
- MIC2563A-0BSM
- MIC2563A-1BSM
- MIC29150-3.3BT
- MIC29150-5.0BT
- MIC29151-3.3BU
- MIC29151-5.0BU
- MIC29152BU
- MIC29202BT
- MIC29203BU
- MIC2920A-12BS
- MIC2920A-5.0BS
- MIC29300-3.3BT
- MIC29300-5.0BT
- MIC29301-3.3BU
- MIC29301-5.0BU
- MIC29302BU
- MIC29303BT
- MIC29310-3.3BU
- MIC29312BU
