High input impedance

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applica

文件：149.23 Kbytes 页数：5 Pages

Fairchild

仙童半导体

Insulated Gate Bipolar Transistors (IGBT)

General Description\nInsulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe application • High input impedance\n• High peak current capability (150A)\n• Easy gate drive\n• Surface Mount : SGR20N40L\n• Straight Lead : SGU20N40LApplication\nStrobe flash.;

ONSEMI

安森美半导体

Package：TO-251-3 短引线，IPak，TO-251AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 45W IPAK

ONSEMI

安森美半导体

Low saturation voltage

文件：1.14213 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

Low saturation voltage

文件：1.14213 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体