SGU20N40L

High input impedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica

SGU20N40LTU

Package：TO-251-3 短引线，IPak，TO-251AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 400V 45W IPAK

20N40

400V,23AN-CHANNELPOWERMOSFET

20N40CL

SMARTDISCRETESInternallyClamped,N-ChannelIGBT

SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C

20N40H

20A竊?00VN-CHANNELMOSFET

20N40K-MT

N-CHANNELPOWERMOSFET

AOTF20N40

iscN-ChannelMOSFETTransistor

AOTF20N40

400V,20AN-ChannelMOSFET

FDH20N40

20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET

Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo

FDH20N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch