SGU20N40L中文资料Insulated Gate Bipolar Transistors (IGBT)数据手册ONSEMI规格书

描述 Description

General Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications

特性 Features

• High input impedance
• High peak current capability (150A)
• Easy gate drive
• Surface Mount : SGR20N40L
• Straight Lead : SGU20N40LApplication
Strobe flash.

简介

SGU20N40L属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的SGU20N40L晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。