| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
400V,23AN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
20A竊?00VN-CHANNELMOSFET | KIAGuangdong Keyia Semiconductor Technology Co., Ltd 可易亚半导体广东可易亚半导体科技有限公司 | KIA | ||
N-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
400V,20AN-ChannelMOSFET | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=20A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.216Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=45A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.02Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
20A,400V,0.216Ohm,N-ChannelSMPSPowerMOSFET Features •LowGateChargeQgresultsinSimpleDriveRequirement •ImprovedGate,AvalancheandHighReapplieddv/dtRuggedness •ReducedrDS(ON) •ReducedMillerCapacitanceandLowInputCapacitance •ImprovedSwitchingSpeedwithLowEMI •175°CRatedJunctionTemperature pp SwitchMo | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
400VN-ChannelMOSFET Features •19.5A,400V,RDS(on)=0.22Ω@VGS=10V •Lowgatecharge(typical60nC) •LowCrss(typical45pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=19.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SMARTDISCRETESInternallyClamped,N-ChannelIGBT SMARTDISCRETESInternallyClamped,N-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresGate–EmitterESDprotection,Gate–CollectorovervoltageprotectionfromSMARTDISCRETESmonolithiccircuitryforusageasanIgnitionCoilDriver. •TemperatureCompensatedGate–C | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE | DIODES Diodes Incorporated | DIODES | ||
DUALSURFACEMOUNTSCHOTTKYBARRIERDIODE Features •LowForwardVoltageDrop •CommonAnodeConfiguration •LeadFreeByDesign/RoHSCompliant(Note3) •GreenDevice(Note4) | DIODES Diodes Incorporated | DIODES | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
GeneralDescription GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Highinputimpedance GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withatrenchgatestructureprovidesuperiorconductionandswitchingperformanceincomparisonwithtransistorshavingaplanargatestructure.Theyalsohavewidenoiseimmunity.Thesedevicesareverysuitableforstrobeapplica | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
2020+ |
SOT-263 |
5600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VB |
2019 |
TO-263 |
55000 |
绝对原装正品假一罚十! |
询价 | ||
ON/安森美 |
23+ |
SOT-263 |
35200 |
只做原装主打品牌QQ询价有询必回 |
询价 | ||
ON/安森美 |
22+ |
SOT-263 |
4670 |
MICROCHIP全系列供应原装现货! |
询价 | ||
ON/安森美 |
21+ |
SOT-263 |
3870 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
ON/安森美 |
23+ |
SOT-263 |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ON/安森美 |
22+ |
SOT-263 |
12245 |
现货,原厂原装假一罚十! |
询价 | ||
ON/安森美 |
2122+ |
SOT-263 |
45744 |
保证原装现货注明假一罚万 |
询价 | ||
ON/安森美 |
23+ |
SOT-263 |
10000 |
原装进口只做订货 寻找优势渠道合作 |
询价 | ||
ON/安森美 |
14+ |
SOT-263 |
880000 |
明嘉莱只做原装正品现货 |
询价 |
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