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15N40

15A,400VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC15N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalan

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

15N40K-MT

N-CHANNELPOWERMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

DAM15N40S

N-ChannelEnhancementModeMOSFET

DACO

DACO

FDP15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=15A@TC=25℃ ·DrainSourceVoltage :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP15N40

DESIGN/PROCESSCHANGENOTIFICATION

Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP15N40

N-ChannelMOSFET400V,15A,0.3廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF15N40

N-ChannelMOSFET400V,15A,0.3廓

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDPF15N40

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FGR15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40L

ElectricalCharacteristicsofIGBT

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40L

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGS15N40LTF

HighInputImpedance

GeneralDescription InsulatedGateBipolarTransistors(IGBTs)withtrenchgatestructurehavesuperiorperformanceinconductanceandswitchingtoplanargatestructureandalsohavewidenoiseimmunity.Thesedevicesarewellsuitableforstrobeapplication Features •HighInputImpedance •H

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FGW15N40A

StrobeFlashN-ChannelLogicLevelIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MGB15N40CL

IgnitionIGBT15Amps,410Volts

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGB15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGC15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP15N40CL

InternallyClampedN-ChannelIGBT

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP15N40CL

IgnitionIGBT15Amps,410Volts

InternallyClampedN-ChannelIGBT ThisLogicLevelInsulatedGateBipolarTransistor(IGBT)featuresmonolithiccircuitryintegratingESDandOver–Voltageclampedprotectionforuseininductivecoildriversapplications.PrimaryusesincludeIgnition,DirectFuelInjection,orwhereverhighvolt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP15N40CL

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGP15N40CLG

IgnitionIGBT15Amps,410VoltsN-ChannelTO-220andD2PAK

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
ON/安森美
23+
TO-263
50000
全新原装正品现货,支持订货
询价
ON/安森美
22+
SOT-263
20000
保证原装正品,假一陪十
询价
ON/安森美
22+
SOT-263
100000
代理渠道/只做原装/可含税
询价
ON/安森美
23+
TO-263
89630
当天发货全新原装现货
询价
ON-安森美
24+25+/26+27+
TO-263-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
INFINEON/ON
SOT-263
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
INPAQ
22+
SMD
38420
原装现货样品可售
询价
ON
08PB
90000
询价
TO-251
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
ON
2023+
TO-251
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
更多MGB15N40LC供应商 更新时间2024-6-22 11:49:00