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MF7N60

MOSFET

SPMicro

三浦微电子

MGP7N60E

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:122.09 Kbytes 页数:6 Pages

Motorola

摩托罗拉

MGP7N60E

Insulated Gate Bipolar Transistor

This Insulated Gate Bipolar Transistor (IGBT) uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both a high temperature short circuit capability and a low VCE(on)

文件:118.14 Kbytes 页数:5 Pages

ONSEMI

安森美半导体

MGP7N60ED

Insulated Gate Bipolar Transistor withr Anti-Parallel Diode

This Insulated Gate Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage–blocking capability. Its new 600 V IGBT technology is specifically suited for applications requiring both

文件:144.18 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

技术参数

  • ID(A):

    7

  • Rdson(Ω)_Type:

    1.6

  • Rdson(Ω)_Max:

    2

  • Vth(V):

    3

  • Rg(Ω)Max:

    5.5

  • CiSS(pF) Type:

    1200

  • Coss(pF)Type:

    95

  • Crss (pF)Type:

    6.5

  • 封装类型:

    TO-220C/220F/262/263

供应商型号品牌批号封装库存备注价格
SPS
17+
TO-220F
6200
询价
SP
23+
TO-220F
50000
全新原装正品现货,支持订货
询价
SP
23+
TO-220F
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
SPS/源芯
23+
TO-220F
89630
当天发货全新原装现货
询价
ME
2015+
SOT23-5
26998
专业代理电源DC-DC降压IC,型号齐全,公司优势产品
询价
ME
24+
SOT23-5
362652
电源IC原装现货有优势
询价
ME
23+
SOT23-5
50000
全新原装正品现货,支持订货
询价
ME
10+
SOT23-5
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ME
24+
NA/
6250
原装现货,当天可交货,原型号开票
询价
ME
24+
SOT23-5
5000
全新原装正品,现货销售
询价
更多MF7N60供应商 更新时间2025-12-23 16:00:00