MOS(场效应管)

MicrOne

微盟电子

30V(D-S) N-Channel Enhancement Mode Power MOS FET

文件：422.4 Kbytes 页数：6 Pages

MORESEMI

摩矽半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：475.3 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 页数：2 Pages

NTE