N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：475.3 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET

MTsemi

茂钿

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

文件：23.7 Kbytes 页数：2 Pages

NTE

Dual High-Efficiency PWM Step-Down DC-DC Coverter

General Description The PAM2306 is a dual step-down current-mode, DC-DC converter. At heavy load, the constant-frequency PWM control performs excellent stability and transient response. To ensure the longest battery life in portable applications, the PAM2306 provides a power-saving PulseSkipping

文件：407.08 Kbytes 页数：15 Pages

PAM

龙鼎微

DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER

文件：570.33 Kbytes 页数：15 Pages

DIODES

美台半导体