UPD6604

MOSINTEGRATEDCIRCUIT

FEATURES •Programmemory(ROM):1002´10bits •Datamemory(RAM):32´4bits •Built-incarriergenerationcircuitforinfraredremotecontrol •9-bitprogrammabletimer:1channel •Commandexecutiontime:8ms(whenoperatingatfOSC=1MHz:RCoscillation) •Stacklevel:1level

UPD6604

4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

UPD6604GS

4-BITSINGLE-CHIPMICROCONTROLLERFORINFRAREDREMOTECONTROLTRANSMISSION

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

XC6604

0.5VLowInput,1AHighSpeedLDORegulatorwithAdjustableCurrentLimit

XPJR6604PB

MOSFETsSiliconN-channelMOS

Applications •Automotive •SwitchingVoltageRegulators •MotorDrivers •DC-DCConverters Features (1)AEC-Q101qualified (2)Lowdrain-sourceon-resistance:RDS(ON)=0.53mΩ(typ.)(VGS=10V) (3)Lowleakagecurrent:IDSS=10μA(max)(VDS=40V) (4)Enhancementmode:Vth=2.0to