MCG50N03资料datasheet下载批发采购美微科-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MCG50N03	文件：300 bytes Page：1 Pages	Power MOSFETS	MCC 美微科	MCC
PHB50N03	文件：108.76 Kbytes Page：11 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level 文件：108.76 Kbytes 页数：11 Pages	PHI PHI	PHI
PHB50N03T	文件：63.66 Kbytes Page：7 Pages	TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended 文件：63.66 Kbytes 页数：7 Pages	PHI PHI	PHI
PHD50N03LT	文件：108.76 Kbytes Page：11 Pages	N-channel TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance • Logic level 文件：108.76 Kbytes 页数：11 Pages	PHI PHI	PHI

更多MCG50N03供应商更新时间2026-4-14 10:00:00