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型号	下载订购	功能描述	制造商上传企业	LOGO
MC33GD3100	文件：508.6 Kbytes Page：18 Pages	Advanced IGBT/SiC gate driver description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Curr 文件：508.6 Kbytes 页数：18 Pages	恩XP	恩XP
MC33GD3100	文件：480.35 Kbytes Page：21 Pages	Advanced IGBT/SiC gate driver 1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control 文件：480.35 Kbytes 页数：21 Pages	恩XP	恩XP
MC33GD3100_V01	文件：480.35 Kbytes Page：21 Pages	Advanced IGBT/SiC gate driver 1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control 文件：480.35 Kbytes 页数：21 Pages	恩XP	恩XP
MC33GD3100A3EK	文件：508.6 Kbytes Page：18 Pages	Advanced IGBT/SiC gate driver description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Curr 文件：508.6 Kbytes 页数：18 Pages	恩XP	恩XP
MC33GD3100A3EK	文件：480.35 Kbytes Page：21 Pages	Advanced IGBT/SiC gate driver 1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control 文件：480.35 Kbytes 页数：21 Pages	恩XP	恩XP
MC33GD3100B3EK	文件：480.35 Kbytes Page：21 Pages	Advanced IGBT/SiC gate driver 1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control 文件：480.35 Kbytes 页数：21 Pages	恩XP	恩XP
MC33GD3100BEK	文件：480.35 Kbytes Page：21 Pages	Advanced IGBT/SiC gate driver 1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control 文件：480.35 Kbytes 页数：21 Pages	恩XP	恩XP
MC33GD3100EK	文件：480.35 Kbytes Page：21 Pages	Advanced IGBT/SiC gate driver 1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control 文件：480.35 Kbytes 页数：21 Pages	恩XP	恩XP
MC33GD3100EK	文件：508.6 Kbytes Page：18 Pages	Advanced IGBT/SiC gate driver description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Curr 文件：508.6 Kbytes 页数：18 Pages	恩XP	恩XP
MC33GD3100EK	文件：300 bytes Page：1 Pages	EV Inverter Control; IGBT & SiC GDIC The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.\nCurrent and temperature sense minimizes IGBT High level of integration andflexibility for any IGBT/SiC module\n• Galvanic signal isolation\n• 10 A on/off power stage\n• Active Miller Clamp\n• 3.3 or 5.0 V I/O\n• Compatible with 200 to 1700 V IGBTs/SiC\n• SPI for programmability and diagnostics\n• Reduces BOM costs and PCB size\nFast overcurren;	恩XP 恩智浦	恩XP

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技术参数

Device Function：
HV Isolated IGBT & SiC Single gate driver IC
Logic Level(V)：
3.3
Package Type：
SSOP32
Package Termination Count：
32
Budgetary Price excluding tax：
4.2117
Frequency(Max)(kHz)：
40
Load Current(IL) [TYP](A)：
15
Number of Channels：
1
Protection：
desaturation
Drain-to-Source On Resistance(Typ)(mOhm)(RDS(ON))：
500
Load Supply Voltage(Min)(V)：
-12
Load Supply Voltage(Max)(V)：
25
Supply Voltage [min](V)：
5
Supply Voltage [max](V)：
40
SPI [bits]：
24
Ambient Operating Temperature(Min to Max)(℃)：
-40 to 125
ASIL Certification：
up to ASIL-D

供应商	型号	品牌	批号	封装	库存	备注	价格
艾睿（深圳）半导体有限公司	MC33GD3100A3EK	恩XP	2447	SOIC-32	315000	42个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市冠亿通科技有限公司	MC33GD3100A3EK	恩XP	25+		25000	原厂原包深圳现货主打品牌假一赔百可开票!	询价
讯运(深圳/上海)电子有限公司	MC33GD3100EK	恩XP	2021+	SOIC-32	499		询价
深圳市威尔健半导体有限公司	MC33GD3100EK	FREESCALE	23+	SSOP32	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	MC33GD3100EK	恩XP	23+	SOIC-32	6900	全新原装正品现货,支持订货	询价
深圳市河锋鑫科技有限公司	MC33GD3100EK	恩XP	2021+	SOIC-32	6900	原厂原装,假一罚十	询价
深圳市富利微电子科技有限公司	MC33GD3100EK	恩XP	24+	SOIC-32	30000	原装正品公司现货,假一赔十!	询价
深圳市斌能达电子科技有限公司	MC33GD3100EK	恩XP	24+	SOIC-32	6000	全新原装深圳仓库现货有单必成	询价
深圳市鑫炜纳电子有限公司	MC33GD3100EK	恩XP	2022+	SOIC-32	6900	原厂原装,假一罚十	询价
深圳市恒凯威科技开发有限公司	MC33GD3100EK	恩XP	21+	SOIC-32	8080	只做原装,质量保证	询价

更多MC33GD3100供应商更新时间2025-10-5 15:01:00

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