MC33GD3100EK

EV Inverter Control; IGBT & SiC GDIC; High level of integration andflexibility for any IGBT/SiC module\n• Galvanic signal isolation\n• 10 A on/off power stage\n• Active Miller Clamp\n• 3.3 or 5.0 V I/O\n• Compatible with 200 to 1700 V IGBTs/SiC\n• SPI for programmability and diagnostics\n• Reduces BOM costs and PCB size\nFast overcurrent or short circuitprotection \n• Both I-sense or DESAT sense available\n• Two-level turn-off\n• Soft shutdown\nCompliant with ISO26262 ASIL C/Dfunctional safety requirements (certification pending)\n• VGE monitoring to verify communication between PWM input and Gate output\n• Fail-safe pins allowing redundant gate control\n• Secure SPI settings with Cycle Redundancy Check (CRC)\n• Enforced deadtime protection\n• Built-In Self-Test (BIST) for analog and digital circuits\n;

The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.\nCurrent and temperature sense minimizes IGBT/SiC stress during faults\nAccurate and configurable under voltage lockout provides protection while ensuring sufficient gate drive voltage headroom\nAutonomously manages severe faults and reports faults and status via INTB pin and an SPI interface. It is capable of directly driving gates of many IGBTs/SiC\nSelf-test, control, and protection functions are included for the design of high-reliability systems\n

MC33GD3100B3EK

面向IGBT和SiC MOSFET的高级高压隔离栅极驱动器;

MC33GD3100BEK

面向IGBT和SiC MOSFET的高级高压隔离栅极驱动器;