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MC33GD3100B3EK中文资料恩XP数据手册PDF规格书

MC33GD3100B3EK
厂商型号

MC33GD3100B3EK

功能描述

Advanced IGBT/SiC gate driver

文件大小

480.35 Kbytes

页面数量

21

生产厂商 未知制造商
企业简称

恩XP

中文名称

未知制造商

数据手册

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更新时间

2025-6-24 22:59:00

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MC33GD3100B3EK规格书详情

1 General description

The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.

Current and temperature sense minimizes IGBT stress during faults. Accurate and configurable undervoltage lockout (UVLO) provides protection while ensuring sufficient gate drive voltage headroom. The MC33GD3100 autonomously manages severe faults and reports faults and status via INTB pin and a SPI interface. It is capable of directly driving gates of most IGBTs and SiC MOSFETs. Self test, control and protection functions are included for design of high reliability systems (ASIL C/D). It meets the stringent requirements of automotive applications and is fully AEC-Q100 grade 1 qualified.

3 Features and benefits

This section summarizes the key features, safety features, and regulatory approvals.

3.1 Key features

• SPI interface for safety monitoring, programmability and flexibility

• Low propagation delay and minimal PWM distortion

• Integrated Galvanic signal isolation (up to 8 kV)

• Integrated gate drive power stage capable of 15 A peak source and sink

• Fully programmable Active Miller Clamp

• Compatible with negative gate supply

• Compatible with current sense and temperature sense IGBTs

• Integrated soft shutdown, two-level turn-off, active clamp, and segmented drive for wave shaping

• CMTI > 100 V/ns

• Compatible with 200 V to 1700 V IGBT/SiC, power range > 125 kW

• Operating temperature range −40 °C to 125 °C

• External Creepage distance (CPG): > 7.8 mm

• Operating frequency > 40 kHz

• Available in 5.0 V or 3.3 V logic interface variants

3.2 Safety features

• Certified to ASIL D ISO26262 functional safety requirements for full diagnostics

• Current, DESAT, and temperature sense inputs and ADC reporting for IGBT/SiC monitoring

• Fast short-circuit protection, overcurrent protection, temperature warning and shutdown

• Interrupt pin for fast response to faults

• Built-in self-check of all analog and digital circuits

• Continuous watchdog of die-to-die communications

• Mandatory deadtime enforcement

• Over- and undervoltage supervision of all power supplies on both low- and high-voltage sides

• Fail-safe state management pins on both low- and high-voltage sides

• VGE real-time cycle-by-cycle monitoring

3.3 Safety and regulatory approvals

• Reinforced Isolation per DIN V VDE V 0884-10

• Withstand 5000 V rms (1 minute) isolation per UL 1577

• CSA Component Acceptance Notice 5A

• AEC-Q100 grade 1 automotive qualified

供应商 型号 品牌 批号 封装 库存 备注 价格
恩XP
24+
SOIC32300mil
7350
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询价
FREESCALE
24+
NA/
7085
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恩XP
25+
25000
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询价
FREESCALE/飞思卡尔
24+
SSOP32
14280
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恩XP
23+
SOIC-32
12700
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恩XP
25+
原厂封装
10280
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恩XP
24+
SOIC-32
30000
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恩XP
23+
NA
6000
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恩XP
24+
SOIC-32
6000
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恩XP
23+
SOIC-32
9865
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询价