Advanced IGBT/SiC gate driver

description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Curr

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Advanced IGBT/SiC gate driver

1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control

文件：480.35 Kbytes 页数：21 Pages

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EV Inverter Control; IGBT & SiC GDIC

The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.\nCurrent and temperature sense minimizes IGBT High level of integration andflexibility for any IGBT/SiC module\n• Galvanic signal isolation\n• 10 A on/off power stage\n• Active Miller Clamp\n• 3.3 or 5.0 V I/O\n• Compatible with 200 to 1700 V IGBTs/SiC\n• SPI for programmability and diagnostics\n• Reduces BOM costs and PCB size\nFast overcurren;

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恩智浦

NXP
HVQFN48

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上传：深圳市赛特兴科技有限公司

NXP
QFN56

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上传：深圳庞田科技有限公司