Advanced IGBT/SiC gate driver

description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Curr

文件：508.6 Kbytes 页数：18 Pages

恩XP

Advanced IGBT/SiC gate driver

1 General description The MC33GD3100 is an advanced single channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control

文件：480.35 Kbytes 页数：21 Pages

恩XP

EV Inverter Control; IGBT & SiC GDIC

The GD3100 is an advanced single-channel gate driver for IGBTs/SiC. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control.\nCurrent and temperature sense minimizes IGBT High level of integration andflexibility for any IGBT/SiC module\n• Galvanic signal isolation\n• 10 A on/off power stage\n• Active Miller Clamp\n• 3.3 or 5.0 V I/O\n• Compatible with 200 to 1700 V IGBTs/SiC\n• SPI for programmability and diagnostics\n• Reduces BOM costs and PCB size\nFast overcurren;

恩XP

HVQFN48

恩XP

上传：深圳市赛特兴科技有限公司

QFN56

恩XP

上传：深圳庞田科技有限公司