Hex Gate

文件：97.31 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Hex Gate

文件：115.33 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Hex Gate

文件：94.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Hex Gate

The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one N

恩XP

六路门极；4 个逆变器；1 个 NOR；1 个 NAND

The MC14572UB hex functional gate is constructed with MOS P-channel and N-channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one N • Diode Protection on All Inputs\n• Single Supply Operation\n• Supply Voltage Range = 3.0 Vdc to 18 Vdc\n• NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter\n• NAND Input Pin Adjacent to VDD Pin to Simplify Use As An Inverter\n• NOR Output Pin Adjacent to Inverter Input Pin For OR App;

ONSEMI

安森美半导体

Package：16-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 - 多功能，可配置 描述：IC GATE HEX NAND/NOR/INV 16-SOIC

ONSEMI

安森美半导体

Package：16-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 - 多功能，可配置 描述：IC GATE HEX NAND/NOR/INV 16-SOIC

ONSEMI

安森美半导体

Package：16-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 门和反相器 - 多功能，可配置 描述：IC GATE HEX NAND/NOR/INV 16-SOIC

ONSEMI

安森美半导体