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MC1405

ANALOG - TO - DIGITAL CONVERTER SUBSYSTEM

文件:758.84 Kbytes 页数:14 Pages

MOTOROLA

摩托罗拉

MC14050B

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

文件:241.27 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050B

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050BCP

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050BCPG

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050BD

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050BDG

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

文件:241.27 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050BDR2

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050BDR2G

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

文件:241.27 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MC14050BDR2G

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Channels:

    6

  • Output:

    CMOS

  • VCC Min (V):

    3

  • VCC Max (V):

    18

  • tpd Max (ns):

    80

  • IO Max (mA):

    16

  • Package Type:

    SOIC-16

供应商型号品牌批号封装库存备注价格
ON
05+
原厂原装
833
只做全新原装真实现货供应
询价
ON
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
ON/安森美
2022+
2500
全新原装 货期两周
询价
ON
24+
DIP
36500
原装现货/放心购买
询价
ON
20+
38500
全新现货热卖中欢迎查询
询价
MOT
24+/25+
115
原装正品现货库存价优
询价
ON
25+
500000
原厂原装,价格优势
询价
ON
25+
SOP8
154
普通
询价
ONN
24+
20
绝对进口原装,现货热销
询价
MOTO
25+
长期备有现货
500000
行业低价,代理渠道
询价
更多MC1405供应商 更新时间2026-1-17 10:32:00