Lan transformer,  SMT

• 1.RoHS Compliant;\n2.Designed to meet IEEE802.3 requirements;\n3.Storage Temperature：-40℃ To +85℃，Operating Temperature:-40℃ To +85℃;\n4.SRP: Conforms to IPC/JEDEC J-STD-020;\n5.Solderability:Conforms to ANSI/J-STD-002;\n6.Packaging with tapes and reels.;

M-TEK

鸿磬科技

N-Channel Enhancement Mode Field Effect Transistor

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, a

文件：66.97 Kbytes 页数：6 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.13 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching pe

文件：68.22 Kbytes 页数：6 Pages

Fairchild

仙童半导体