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MC14050B

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

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MC14050B

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

文件:241.27 Kbytes 页数:8 Pages

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MC14050B

Hex Buffer

文件:156.13 Kbytes 页数:9 Pages

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MC14050BCP

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

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MC14050BCPG

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

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MC14050BD

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

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MC14050BDG

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

文件:241.27 Kbytes 页数:8 Pages

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MC14050BDR2

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

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MC14050BDR2G

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P–Channel and N–Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired. Thes

文件:106.06 Kbytes 页数:8 Pages

ONSEMI

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MC14050BDR2G

Hex Buffer

The MC14049B Hex Inverter/Buffer and MC14050B Noninverting Hex Buffer are constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. These complementary MOS devices find primary use where low power dissipation and/or high noise immunity is desired.

文件:241.27 Kbytes 页数:8 Pages

ONSEMI

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技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Channels:

    6

  • Output:

    CMOS

  • VCC Min (V):

    3

  • VCC Max (V):

    18

  • tpd Max (ns):

    80

  • IO Max (mA):

    16

  • Package Type:

    SOIC-16

供应商型号品牌批号封装库存备注价格
ON
23+
SOP
12560
受权代理!全新原装现货特价热卖!
询价
ON
2021+
SOP
6800
原厂原装,欢迎咨询
询价
MOT
25+
SOP-16
18000
原厂直接发货进口原装
询价
A
24+
b
3
询价
MOT
25+
SMD
2300
十年品牌!原装现货!!!
询价
MOT
23+
SOP
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
MOT
24+
5.2
5000
只做原装公司现货
询价
MOT
25+
NULL
4500
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
MOT
25+
DIP16
3629
原装优势!房间现货!欢迎来电!
询价
ON
25+23+
SOP
55628
绝对原装正品现货,全新深圳原装进口现货
询价
更多MC14050B供应商 更新时间2025-10-4 8:01:00