B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：171.86 Kbytes 页数：14 Pages

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B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：171.86 Kbytes 页数：14 Pages

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安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：171.86 Kbytes 页数：14 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：171.86 Kbytes 页数：14 Pages

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安森美半导体

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes 页数：12 Pages

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安森美半导体

B?뭆uffix Series CMOS Gates

文件：195.05 Kbytes 页数：14 Pages

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安森美半导体

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

文件：135.47 Kbytes 页数：11 Pages

ONSEMI

安森美半导体