B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：171.86 Kbytes 页数：14 Pages

ONSEMI

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B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

Package：14-DIP（0.300"，7.62mm）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 门和反相器 描述：IC GATE NAND 3CH 3-INP 14DIP

ONSEMI

安森美半导体

B-SUFFIX SERIES CMOS GATES

文件：134.49 Kbytes 页数：12 Pages

ONSEMI

安森美半导体

B-Suffix Series CMOS Gates

TheB Series logic gates are constructed with P and N channel enhancementmode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. 1. Supply Voltage Range = 3.0 Vdc to 18 Vdc 2. All Outputs Buffered

文件：327.76 Kbytes 页数：11 Pages

MOTOROLA

摩托罗拉

B-Suffix Series CMOS Gates

B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure (Complementary MOS). Their primary use is where low power dissipation and/or high noise immunity is desired. Features • Supply Voltage Range = 3.0 V

文件：171.86 Kbytes 页数：14 Pages

ONSEMI

安森美半导体