Dual General Purpose Transistors

Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications and are housed in the SOT–363 six–leaded surface mount package. By putting two d

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LRC

乐山无线电

Dual General Purpose Transistors

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ETL

亚历电子

Dual General Purpose Transistor

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ONSEMI

安森美半导体

NPN PNP Bipolar Transistor

The NPN PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low power • hFE, 100-300\n• Low VCE(sat), ≤ 0.4 V\n• Simplifies Circuit Design\n• Reduces Board Space\n• Reduces Component Count\n• Available in 8 mm, 7-inch/3,000 Unit Tape and Reel\n• Device Marking: MBT3946DW1T1 = 46\n• Pb-Free Packages are Available\n• S and NSV Prefix for Automotive and Other Application;

ONSEMI

安森美半导体

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列 描述：TRANS DUAL GP 200MA 40V SOT363

ONSEMI

安森美半导体

Dual General Purpose Transistor

The MBT3946DW1T1G device is a spin-off of our popular SOT−23/SOT−323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363−6 surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount

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ONSEMI

安森美半导体

Dual General Purpose Transistor

文件：168.56 Kbytes 页数：12 Pages

ONSEMI

安森美半导体