MBT3946DW1T1中文资料NPN PNP Bipolar Transistor数据手册ONSEMI规格书

描述 Description

The NPN PNP Bipolar Transistor is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low power surface mount applications where board space is at a premium.

特性 Features

• hFE, 100-300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7-inch/3,000 Unit Tape and Reel
• Device Marking: MBT3946DW1T1 = 46
• Pb-Free Packages are Available
• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

简介

MBT3946DW1T1属于分立半导体产品的晶体管-双极性晶体管（BJT）-阵列。由制造生产的MBT3946DW1T1晶体管 - 双极性晶体管（BJT）- 阵列双极晶体管阵列在同一封装中包含两个或更多的分立晶体管，这些晶体管可在电气上完全隔离，也可在器件封装内部以某种形式互连。阵列中包含的器件具有相近或互补的特性，采用共同封装可最大程度减小器件在工作过程中的温差。